دانلود کتاب خارجی - دانلود رایگان کتاب لاتین PDF علمی

تعداد نتایج: 13637

Leitungsrechte

Wasser - Abwasser - Strom - Gas

By Dieter B. Schütte, Michael Horstkotte, Per Seeliger
Publisher: Kohlhammer Verlag, 2011-05-26
Pages: 203
Language: de
ISBN_13:9783170282766
ISBN_10:317028276X
Subject: Law

Militär-Schematismus des österreichischen Kaiserthumes

1848

Free PDF Free Epub

جزئیات و درخواست

1848
Pages: 812
Language: de
OTHER:BSB:BSB10010567

Hof- und Staats-Handbuch des Kaiserthumes Österreich

für das Jahr ...

Free Epub

جزئیات و درخواست

By Österreich
1858
Language: de
OTHER:ONB:+Z113981408

Kais. Königl. Militär-Schematismus für 1874

جزئیات و درخواست

By Anonymous
Publisher: BoD – Books on Demand, 2020-05-04
Pages: 925
Language: de
ISBN_13:9783846051870
ISBN_10:384605187X
Subject: History

Wismar 1665

eine Stadtgesellschaft im Spiegel des Türkensteuerregisters

جزئیات و درخواست

By Christine Decker
Publisher: LIT Verlag Münster, 2006
Pages: 158
Language: de
ISBN_10:3825891925
ISBN_13:9783825891923

Militär-Schematismus des österreichischen Kaiserthums

Free PDF Free Epub

جزئیات و درخواست

By Austro-Hungarian Monarchy. K.u.K. Kriegsministerium
1867
Pages: 1122
Language: de
OTHER:UOM:39015062383396

Europa von A bis Z

Taschenbuch der europäischen Integration

جزئیات و درخواست

By Werner Weidenfeld, Wolfgang Wessels, Funda Tekin
Publisher: Springer-Verlag, 2020-12-21
Pages: 653
Language: de
ISBN_13:9783658244552
ISBN_10:3658244550
Subject: Political Science

Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect

$Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. In particular, for the growing field of high frequency and high power electronics, silicon cannot offer the required properties. Development of materials capable of providing high current densities, carrier mobilities and high breakdown fields is crucial for further progress in state of the art electronics. Epitaxial graphene grown on semi-insulating silicon carbide substrates has a high potential to be integrated in current planar device technologies. High electron mobilities and sheet carrier densities make graphene extremely attractive for high frequency analog applications. One of the remaining challenges is the interaction of epitaxial graphene with the substrate. Typically, much lower free charge carrier mobilities, compared to free standing graphene, and doping, due to charge transfer from the substrate, is reported. Thus, a good understanding of the intrinsic free charge carriers properties and the factors affecting them is very important for further development of epitaxial graphene. Group III-nitrides have been extensively studied and already have proven their high efficiency as light emitting diodes for short wavelengths. High carrier mobilities and breakdown electric fields were demonstrated for group III-nitrides, making them attractive for high frequency and high power applications. Currently, In-rich InGaN alloys and AlGaN/GaN high electron mobility structures are of high interest for the research community due to open fundamental questions such as free charge carrier properties at high temperatures and wavefunction hybridization in AlGaN/GaN heterostructures. Electrical characterization techniques, commonly used for the determination of free charge carrier properties, require good ohmic and Schottky contacts, which in certain cases can be difficult to achieve. Access to electrical properties of buried conductive channels in multilayered structures requires modification of samples and good knowledge of the electrical properties of all electrical junctions within the structure. Moreover, the use of contacts to electrically characterize two-dimensional electronic materials, such as graphene, can alter their intrinsic properties. Furthermore, the determination of effective mass parameters commonly employs cyclotron resonance and Shubnikov-de Haas oscillations measurements, which require long scattering times of free charge carriers, high magnetic fields and low temperatures. The optical Hall effect is an external magnetic-field induced birefringence of conductive layers due to the free charge carriers interaction with long-wavelength electromagnetic waves under the influence of the Lorentz force. The optical Hall effect can be measured by generalized ellipsometry and provides a powerful method for the determination of free charge carrier properties in a non-destructive and contactless manner. The optical Hall effect measurements can provide quantitative information about free charge carrier type, concentration, mobility and effective mass parameters at temperatures ranging from few kelvins to room temperature and above. It further allows to differentiate the free charge carrier properties of individual layers in multilayer samples. The employment of a backside cavity for transparent samples can enhance the optical Hall effect and allows to access free charge carrier properties at relatively low magnetic fields using permanent magnet. The optical Hall effect measurements at mid-infrared spectral range can be used to probe quantum mechanical phenomena such as Landau levels in graphene. The magnetic field dependence of the inter-Landau level transition energies and optical polarization selection rules provide information about coupling properties between graphene layers and the electronic band structure. Measurement of the optical Hall effect by generalized ellipsometry is an indirect technique requiring subsequent data analysis. Parameterized optical models are fitted to match experimentally measured ellipsometric spectra by varying physically significant model parameters. Analysis of the generalized ellipsometry data at long wavelengths for samples containing free charge carriers by optical models based on the classical Drude formulation, augmented with an external magnetic field contribution, allows to extract carrier concentration, mobility and effective mass parameters. The development of the integrated FIR and THz frequency-domain ellipsometer at the Terahertz Materials Analysis Center in Linköping University was part of the graduate studies presented in this dissertation. The THz ellipsometer capabilities are demonstrated by determination of Si and sapphire optical constants, and free charge carrier properties of two-dimensional electron gas in GaN-based high electron mobility transistor structures. The THz ellipsometry is further shown to be capable of determining free charge carrier properties and following their changes upon variation of ambient conditions in atomically thin layers with an example of epitaxial graphene. A potential of the THz OHE with the cavity enhancement (THz-CE-OHE) for determination of the free charge carrier properties in atomically thin layers were demonstrated by the measurements of the carrier properties in monolayer and multilayer epitaxial graphene on Si-face 4H-SiC. The data analysis revealed p-type doping for monolayer graphene with a carrier density in the low 1012 cm-2 range and a carrier mobility of 1550 cm2V-1s-1. For the multilayer graphene, n-type doping with a carrier density in the low 1013 cm-2 range, a mobility of 470 cm2V-1s-1 and an effective mass of (0.14 ± 0.03)m0 were extracted. Different type of doping among monolayer and multilayer graphene is explained as a result of different hydrophobicity among samples. Further, we have employed THz-CE-OHE to determine for the first time anisotropic mobility parameter in quasi-free-standing bilayer epitaxial graphene induced by step-like surface morphology of 4H-SiC. Correlation of atomic force microscopy, Raman scattering spectroscopy, scanning probe Kelvin probe microscopy, low energy electron microscopy and diffraction analysis allows us to investigate the possible scattering mechanisms and suggests that anisotropic mobility is induced by varying local mobility parameter due to interaction between graphene and underlaying substrate. The origin of the layers decoupling in multilayer graphene on C-face 4H-SiC was studied by MIR-OHE, transmission electron microscopy and electron energy loss spectroscopy. The results revealed the decoupling of the layers induced by the increased interlayer spacing which is attributed to the Si atoms trapped between graphene layers. MIR ellipsometry and MIR-OHE measurements were employed to determine the electron effective mass in a wurtzite In0.33Ga0.67N epitaxial layer. The data analysis revealed the effective mass parameters parallel and perpendicular to the c-axis which can be considered as equal within sensitivity of our measurements. The determined effective mass is consistent with linear dependence on the In content. Analysis of the free charge carrier properties in AlGaN/GaN high electron mobility structures with modified interfaces showed that AlGaN/GaN interface structure has a significant effect on the mobility parameter. A sample with a sharp interface layers exhibits a record mobility of 2332 ± 73 cm2V-1s-1. The determined effective mass parameters showed an increase compared to the bulk GaN value, which is attributed to the penetration of the electron wavefunction into the AlGaN barrier layer. Temperature dependence of free charge carrier properties in GaN-based high electron mobility transistor structures with AlGaN and InAlN barrier layers were measured by terahertz optical Hall effect technique in a temperature range from 7.2 K to 398 K. The results revealed strong changes in the effective mass and mobility parameters. At temperatures below 57 K very high carrier mobility parameters above 20000 cm2V-1s-1 for AlGaN-barrier sample and much lower mobilities of ~ 5000 cm2V-1s-1 for InAlN-barrier sample were obtained. At low temperatures the effective mass parameters for both samples are very similar to bulk GaN value, while at temperatures above 131 K effective mass shows a strong increase with temperature. The effective masses of 0.344 m0 (@370 K) and 0.439 m0 (@398 K) were obtained for AlGaN- and InAlN-barrier samples, respectively. We discussed the possible origins of effective mass enhancement in high electron mobility transistor structures.$

جزئیات و درخواست

By Nerijus Armakavicius
Publisher: Linköping University Electronic Press, 2019-03-05
Pages: 62
Language: en
ISBN_13:9789176851326
ISBN_10:917685132X

Gentechnologie

die neue Macht des Menschen; Problemorientierungen, Informat...

جزئیات و درخواست

By Mathias Schubert
1988
Pages: 115
Language: de
OTHER:OCLC:315069684

Besonderes Verwaltungsrecht

Band 3: Kommunalrecht, Haushalts- und Abgabenrecht, Ordnungs...

جزئیات و درخواست

By Dirk Ehlers, Michael Fehling, Hermann Pünder
Publisher: C.F. Müller GmbH, 2021-06-01
Pages: 2325
Language: de
ISBN_13:9783811472341
ISBN_10:3811472348
Subject: Law

Datenschutz im vernetzten Fahrzeug

جزئیات و درخواست

2020-05
Pages: 208
Language: de
ISBN_10:3503187545
ISBN_13:9783503187546

Das Kloster Fulda und seine Urkunden

Moderne archivische Erschließung und ihre Perspektiven für d...

جزئیات و درخواست

By Sebastian Zwies
Publisher: Verlag Herder GmbH, 2016-09-13
Pages: 400
Language: de
ISBN_13:9783451846953
ISBN_10:3451846950
Subject: Religion

Handbuch Staat

جزئیات و درخواست

By Rüdiger Voigt
Publisher: Springer-Verlag, 2018-05-29
Pages: 1988
Language: de
ISBN_13:9783658207441
ISBN_10:3658207442
Subject: Political Science

Handbuch des Staatsrechts - Neuausgabe

Band II: Gewinnung und Grundprinzipien des Staatsrechts

جزئیات و درخواست

By Michael Anderheiden, Ivo Appel, Carsten Bäcker, Martin Borowski, Christian Bumke
Publisher: C. F. Müller, 2024-08-27
Pages: 1474
Language: de
ISBN_13:9783811461796
ISBN_10:3811461796
Subject: Law

Der Notar im Aktienrecht

Zugleich ein Beitrag zur Geschichte des Aktienrechts

جزئیات و درخواست

By Matthias Heilmeier
Publisher: Nomos Verlag, 2019-01-14
Pages: 490
Language: de
ISBN_13:9783845289472
ISBN_10:3845289473
Subject: Law

Repräsentation und Gleichheit

Neue Aspekte in der politikwissenschaftlichen Repräsentation...

جزئیات و درخواست

By Bettina Hierath
Publisher: Springer-Verlag, 2013-07-29
Pages: 254
Language: de
ISBN_13:9783663113010
ISBN_10:3663113019
Subject: Social Science

Evaluation der Nachhaltigkeit von Entwicklungszusammenarbeit

Zur Notwendigkeit angemessener Konzepte und Methoden

جزئیات و درخواست

By Alexandra Caspari
Publisher: Springer-Verlag, 2013-03-12
Pages: 305
Language: de
ISBN_13:9783322806499
ISBN_10:3322806499
Subject: Social Science

Die Rechte der Gemeinden beim Ausbau des Übertragungsnetzes

Verfahrensbeteiligung - Berücksichtigungspflichten - Rechtss...

جزئیات و درخواست

By Johanna Decher
Publisher: Mohr Siebeck, 2023-01-04
Pages: 227
Language: de
ISBN_13:9783161618093
ISBN_10:3161618092
Subject: Law

Technisches Umweltrecht

جزئیات و درخواست

By Sabine Schlacke
2010
Pages: 164
Language: de
OTHER:OCLC:935865659

Wismar und seine Eisenbahn

e. Beitr. zur Stadt- u. Verkehrsgeschichte anläßl. d. 750. S...

جزئیات و درخواست

By Mathias Schubert, Lothar Schultz
1979
Pages: 36
Language: de
OTHER:OCLC:251860969

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