Nanocrystals in Nonvolatile Memory

• Author(s): Writam Banerjee,
• Publisher: CRC Press
• Pages: 682
• ISBN_10: 1040119107
  ISBN_13: 9781040119105
  
• Language: en
• Categories: Technology & Engineering / Electronics / Microelectronics , Science / Physics / General , Technology & Engineering / Nanotechnology & MEMS , Technology & Engineering / Materials Science / General , Science / Life Sciences / General , Technology & Engineering / Environmental / General , Technology & Engineering / Electrical , Technology & Engineering / Electronics / General , Mathematics / Applied , Science / Physics / Quantum Theory ,

Description:...

In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe.

The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.