Advanced Semiconductor Heterostructures
Novel Devices, Potential Device Applications and Basic Properties
Description:... This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments. Contents: Novel Heterostructure Devices: ElectronOCoPhonon Interactions in Intersubband Laser Heterostructures (M V Kisin et al.); Quantum Dot Infrared Detectors and Sources (P Bhattacharya et al.); Generation of Terahertz Emission Based on Intersubband Transitions (Q Hu); Mid-Infrared GaSb-Based Lasers with Type-I Heterointerfaces (D V Donetsky et al.); Advances in Quantum-Dot Research and Technology: The Path to Applications in Biology (M A Stroscio & M Dutta); Potential Device Applications and Basic Properties: High-Field Electron Transport Controlled by Optical Phonon Emission in Nitrides (S M Komirenko et al.); Cooling by Inverse Nottingham Effect with Resonant Tunneling (Y Yu et al.); The Physics of Single Electron Transistors (M A Kastner); Carrier Capture and Transport within Tunnel Injection Lasers: A Quantum Transport Analysis (L F Register et al.); The Influence of Environmental Effects on the Acoustic Phonon Spectra in Quantum-Dot Heterostructures (S Rufo et al.); Quantum Devices with Multipole-Electrode OCo Heterojunctions Hybrid Structures (R Tsu). Readership: Undergraduate and graduate level engineering students, electrical engineers, bioengineers and physicists."
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